Impulse Semiconductor ESD Diode for
TSMC .13u LV and G Process
Contact Impulse Semiconductor
Description

The Impulse TSMC .13u ESD diode was made to provide ESD discharge paths when integrating
third party IP in an integrated circuit design for total ESD protection.  The Impulse ESD diode has
been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as
well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors.  A 5.5 volt
reverse bias anode to cathode operational specification enables the Impulse TSMC .13u ESD
diode to be the device of choice for 5 volt tolerant designs.
Features

This robust, silicon-proven ESD diode is available in TSMC .13u G or LV process.  The ESD
diode has a low dynamic resistance under ESD conditions, low capacitance, and is scaleable to
any application with an operating voltage of 5.5 volts and absolute maximum voltage of 6 volts.  
A few Impulse ESD Diode Applications:
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Impulse Semiconductor